A diagnostic pattern for GaAs FET material development and process monitoring

1 December 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 27 (12) , 2285-2291
https://doi.org/10.1109/T-ED.1980.20267

Abstract

A compact diagnostic pattern containing test structures for the measurement of key materials and device processing parameters is presented. The test devices have been used to study the correlation between the meterial and processing parameters and GaAs FET performance. This diagnostic tool has proven to be an invaluable aid in the development of ion-implanted FET's.

Keywords

OHMIC CONTACT
CHARGE CARRIER DENSITY
ETCHING
DIAGNOSTIC TEST
POWER AMPLIFIER
GALLIUM ARSENIDE
CONTACT RESISTANCE
FIELD EFFECT TRANSISTOR
ELECTRICAL RESISTANCE
ION IMPLANTATION
TESTING
HALL EFFECT

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