On the electrical deactivation of arsenic in silicon
- 1 May 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (3) , 757-759
- https://doi.org/10.1116/1.589382
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Chemical information in positron annihilation spectraApplied Physics Letters, 1996
- Vacancy generation resulting from electrical deactivation of arsenicApplied Physics Letters, 1995
- Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InPPhysical Review B, 1995
- Annealing of Heavily Arsenic-Doped Silicon: Electrical Deactivation and a New Defect ComplexPhysical Review Letters, 1988
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- A variable-energy positron beam for low to medium energy researchNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Observation of high momentum tails of positron-annihilation lineshapesSolid State Communications, 1976