GaAs surface oxidation and deoxidation using electron cyclotron resonance oxygen and hydrogen plasmas

1 May 1991

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 9 (3) , 1040-1044
https://doi.org/10.1116/1.577573

Abstract

We have used x-ray photoelectron spectroscopy to investigate electron cyclotron resonance oxygen plasma oxidation and hydrogen plasma deoxidation of GaAs surfaces. Experimental evidence shows that ECR oxidation at room temperature forms a stoichiometric oxide layer that is primarily composed of As2O5 and Ga2O3. A hydrogen plasma is shown to clean GaAs surfaces and recover surface order, even at room temperature. Sample heating (200–300 °C) expedites the removal of Ga2O3 and improves surface order. In addition, no significant differences in oxidation and deoxidation were observed for sample biasing, either positively or negatively.

Keywords

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