Etching model for p doped poly-Si using Cl2 gas
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 820-824
- https://doi.org/10.1016/0168-583x(85)90476-8
Abstract
No abstract availableKeywords
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