A ±30% tuning range varactor compatible with future scaled technologies
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A /spl plusmn/30% capacitance modulation of a new variable capacitor has been achieved for a 2 V variation in the controlling bias voltage. The realized varactor is based on a polysilicon/oxide/n-well structure, implemented in a 0.35 /spl mu/m standard CMOS process. The quality factor for a 3.1 pF sample ranges from 17 to 33, at 1800 MHz.Keywords
This publication has 2 references indexed in Scilit:
- A fully integrated spiral-LC CMOS VCO set with prescaler for GSM and DCS-1800 systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductorsIEEE Journal of Solid-State Circuits, 1997