Pulse Power Failure Modes in Semiconductors
- 1 January 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 17 (6) , 364-372
- https://doi.org/10.1109/tns.1970.4325819
Abstract
Semiconductor devices operating under both biased and unbiased conditions are vulnerable to permanent damage from relatively moderate levels of pulsed electrical energy, particularly of submicrosecond pulse duration. An experimental study was performed to determine the permanent damage levels associated with a number of different devices and to identify the failure mechanisms associated with each. The device types investigated included general purpose and high speed computer diodes, a medium power diode, medium frequency and UHF transistor amplifiers, and a dielectrically isolated diode gate expander. The permanent damage levels associated with these devices were determined both for positive and negative polarity pulses at different conditions of quiescent bias and pulse width. The pulse duration times included the range of 30 to 300 nanoseconds, and in some instances, up to 1 microsecond. Failure models for both thermal second breakdown induced damage to the semiconductor junction and thermal damage to the device interconnecting leads and metallization patterns were also developed.Keywords
This publication has 4 references indexed in Scilit:
- Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse VoltagesIEEE Transactions on Nuclear Science, 1968
- Current mode second breakdown in epitaxial planar transistorsIEEE Transactions on Electron Devices, 1966
- Thermal breakdown in silicon p-n junction devicesIEEE Transactions on Electron Devices, 1966
- Determination of Avalanche Breakdown in pn JunctionsJournal of Applied Physics, 1959