Hg1−xCdxTe native oxide reduction by CVD SiO2

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Abstract
An interfacial reaction is shown to occur between the native oxide on Hg1−xCdxTe and a CVD SiO2 overlayer. Native oxides were grown by anodizing and coated with SiO2 by the reaction of SiH4 and O2 at 100 °C. The structure was analyzed by sputter-XPS profiling. The chemically split components of the Te(3d5/2) line indicate a much greater ratio of reduced to oxidized Te compared to the anodic oxide without SiO2. The reduced material is equivalent to roughly 15 Å of anodic oxide. Calculations indicate that reactions in which oxide compounds of Hg, Cd, and Te are reduced by SiH4, Si, and SiO are thermodynamically favored.

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