Oxide Etching Using Surface Wave Coupled Plasma
- 1 December 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (12S)
- https://doi.org/10.1143/jjap.33.7037
Abstract
Oxide etching was evaluated using a new high-density plasma, which was based on surface wave coupled plasma (SWP). This plasma applicator can uniformly generate microwave plasma over a large area, and it can be formed without quartz tubes or plates. The plasma characteristics of SWP were investigated at the low-pressure region. At the First stage, oxide etching characteristics were evaluated. The SWP oxide etcher had a high etching rate and achieved quarter-micron window etching of vertical profile.Keywords
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