Stacked capacitor cells for high-density dynamic RAMs

6 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 600-603
https://doi.org/10.1109/iedm.1988.32886

Abstract

A novel process sequence fabricating stacked capacitor cells has been developed for high-density dynamic RAMs (random access memories). Enhanced cell capacitance can be obtained by opening the contact window for the lower electrode of the stacked capacitor after the deposition of the electrode poly-Si. This is followed by additional substrate Si etching. The procedure results in sufficient cell capacitance even in 64-Mb dynamic RAMs.<>

Keywords

CAPACITORS
CAPACITANCE
ELECTRODES
DRAM CHIPS
STACKING
SUBSTRATES
ION IMPLANTATION
SEMICONDUCTOR FILMS
ULTRA LARGE SCALE INTEGRATION
SEMICONDUCTOR DEVICES

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