Reverse-biased p + –n − –n + junction at extreme currents
- 21 August 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (17) , 397-398
- https://doi.org/10.1049/el:19750306
Abstract
The computer solution of a coupled set of nonlinear differential equations is used to explain the anomalous voltage across a reverse-biased p+–n−–n+ junction during impulse current testing. The cases of pure avalanche and punchthrough are presented.Keywords
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