Theory of the maximum charge stored in the thin oxide MNOS memory transistor
- 1 July 1971
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 59 (7) , 1134-1136
- https://doi.org/10.1109/PROC.1971.8355
Abstract
The maximum charge stored in the thin oxide metal-nitride-oxide-silicon (MNOS) memory transistor is calculated using a previously developed theory for the oxide current and experimental values for the nitride currents. The calculation is performed for oxide thicknesses of 15-50 Å and for six different nitride deposition temperatures. The theoretical results are shown to agree with recently published experimental data.Keywords
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