Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface
- 1 January 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1) , 113-115
- https://doi.org/10.1063/1.94568
Abstract
The room‐temperature growth of the Pd/n‐GaAs (110) intimate interface has been studied by soft x‐ray core level photoemission spectroscopy. It is shown that Pd reacts with the GaAs surface forming an arsenide compound in which phase segregated Ga metal is included. In addition some As is segregated on the surface of this composite. Using deconvolution of the different core level contributions, the Schottky barrier height of this system is experimentally determined to be 0.9±0.05 eV. The pinning is attributed to the deeper level of the unified defect model.Keywords
This publication has 13 references indexed in Scilit:
- Evidence of palladium phosphide formation at the Pd/InP(110) interfacePhysical Review B, 1983
- Schottky barrier formation of Ag on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Photoemission studies of the effect of temperature on the Au–GaAs(110) interfaceJournal of Vacuum Science & Technology A, 1983
- Fermi-level pinning and chemical structure of InP–metal interfacesJournal of Vacuum Science and Technology, 1982
- Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compoundsThin Solid Films, 1982
- Role of surface antisite defects in the formation of Schottky barriersPhysical Review B, 1982
- Surface vacancies in II–VI and III–V zinc blende semiconductorsJournal of Vacuum Science and Technology, 1981
- Surface defect effects on Schottky barriersJournal of Vacuum Science and Technology, 1981
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980