Secondary breakdown and hot spots in power transistors

1 March 1963

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 51 (3) , 513
https://doi.org/10.1109/PROC.1963.1964

Abstract

Summary form only. An abstract of the above-titled article, taken from the 1963 IEEE International Convention (held March 25-28, New York, NY, USA), is presented.

Keywords

ELECTRIC BREAKDOWN
POWER TRANSISTORS
TEMPERATURE
SEMICONDUCTOR FILMS
VOLTAGE
CORONA
INTERMETALLIC
INDIUM
HALL EFFECT