Hydrogen plasma etching of amorphous and microcrystalline silicon
- 27 August 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (18) , 967-968
- https://doi.org/10.1049/el:19870680
Abstract
The etching of amorphous and microcrystalline silicon films in a hydrogen plasma has been investigated. For amorphous silicon an etch rate of 2.4 A/s was found. Microcrystalline silicon is etched at a rate of 0.3 A/s. Microcrystalline silicon consists of two phases. The amorphous part is removed preferably.Keywords
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