Decay of Excess Carriers in Semiconductors. II

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Abstract
A physical interpretation is given of the nonlinear differential equations which govern the decay of excess carrier populations through recombination centers. No restrictions are placed on the magnitudes of the excess carrier densities or the center density. Criteria for trapping are presented; with semiconductors for which the trapping level lies in the opposite half of the intrinsic gap from the Fermi level, it is shown that trapping can be described as being of either a temporary or permanent nature. The variety of possible modes of decay are illustrated with the aid of numerical solutions and approximate analytic solutions.

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