Determination of electron effective mass, bandgap energy and excited impurity states by photoluminescence experiments
- 10 December 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (34) , 6229-6243
- https://doi.org/10.1088/0022-3719/17/34/023
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Photoluminescence as a diagnostic of semiconductorsProgress in Crystal Growth and Characterization, 1982
- Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopySolid State Communications, 1981
- Donor bound-exciton excited states in zinc selenidePhysical Review B, 1981
- Resonant donor-bound-exciton luminescence in semiconductorsJournal of Physics C: Solid State Physics, 1980
- Recent developments in the optical spectroscopy of II–VI compound semiconductorsCzechoslovak Journal of Physics, 1980
- Cyclotron resonance from photoexcited electrons in ZnTePhysical Review B, 1979
- Anomaly of the linear and quadratic Zeeman effect of an effective-mass acceptor: C in GaAsPhysical Review B, 1978
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Cubic contributions to the spherical model of shallow acceptor statesPhysical Review B, 1974
- Spherical Model of Shallow Acceptor States in SemiconductorsPhysical Review B, 1973