Inversion-Asymmetry Splitting of the Conduction Band in GaSb from Shubnikov-de Haas Measurements

Abstract
A detailed experimental investigation has been carried out on the beating patterns seen in the Shubnikov-de Haas (SdH) oscillations in Te-doped n-GaSb. Samples with Hall coefficients R4.2°K=5.5 cm3/C to R4.2°K=3.2 cm3/C were studied. Typical behavior is seen in a sample with R4.2°K=3.2 cm3/C, where nodes or minima in the oscillatory amplitude occur at ∼11 kG and ∼4.8 kG for B111, and at ∼6.5 kG for B001; no minima are observed for B110. The low-field results are in contrast to high-field behavior in which only approximately exponential field dependence of the oscillatory amplitude is obtained. These patterns are similar to those observed by Whitsett in the SdH effect in n-HgSe. We analyze the results in GaSb initially in terms of a classical model of two Fermi surfaces split by inversion asymmetry. This model qualitatively predicts some features of the data, including the concentration dependence of the highest-field nodal point seen with B111. Finally, we compare the data with predictions of a nonclassical model involving interaction between electron spin and external magnetic fields. The nonclassical model correctly predicts the nodal positions in GaSb, using a value of the splitting parameter C2=0.05, where C2EF is the maximum energy splitting at the Fermi surface. For a sample R4.2°K=3.2 cm3/C (EF0.096 eV), the maximum splitting is 0.005 eV. The analysis further yields a value for the higher-band matrix element sum B (Kane's B) 9.622m0.