A CMOS magnetic field sensor
- 1 August 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 18 (4) , 426-428
- https://doi.org/10.1109/jssc.1983.1051967
Abstract
The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.Keywords
This publication has 3 references indexed in Scilit:
- Micro-Electronic Magnetic TransducersMeasurement and Control, 1973
- A silicon MOS magnetic field transducer of high sensitivityIEEE Transactions on Electron Devices, 1969
- A Metal-Oxide-Semiconductor (MOS) Hall elementSolid-State Electronics, 1966