Self-consistent calculation of electron and hole inversion charges at silicon–silicon dioxide interfaces

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Abstract
The charge distribution at a semiconductor‐insulator interface has been calculated, both for holes and electrons, by solving Schrödinger’s and Poisson’s equations self‐consistently for particles obeying Fermi–Dirac statistics. The results have been applied to carriers in the channel of a crystalline MOSFET (metal‐oxide‐semiconductor field‐effect transistor) with the (100) axis perpendicular to the gate oxide. For weak inversion, the self‐consistent results do not deviate significantly from those obtained assuming a triangular potential well, but for strong inversion the carriers tend to move closer to the oxide. The energy and occupation levels of the subbands are only affected by a few percent on passing from weak to strong inversion, keeping the transversal interface electric field fixed. Finally the gate capacitance has been calculated and found to agree with the experimental data published elsewhere.