Plasma-enhanced chemical vapour deposition of silicon dioxide using tetraethoxysilane as silicon source
- 1 July 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 174, 57-61
- https://doi.org/10.1016/0040-6090(89)90869-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Reduction of the concentration of slow insulator states in SiO2/InP metal–insulator semiconductor structuresJournal of Vacuum Science & Technology B, 1987
- Plasma-Enhanced Chemical Vapor Deposition of Thin FilmsPublished by Elsevier ,1982
- Deposition of Silica Films by the Glow Discharge TechniqueJournal of the Electrochemical Society, 1966