Heavily doped p-type ZnSe layer formation by excimer laser doping
- 2 February 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 184-185, 425-428
- https://doi.org/10.1016/s0022-0248(98)80089-4
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
- Blue-green laser diodesApplied Physics Letters, 1991
- Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctionsJournal of Applied Physics, 1987
- XeCl Excimer laser annealing used in the fabrication of poly-Si TFT'sIEEE Electron Device Letters, 1986
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- Efficient Si solar cells by laser photochemical dopingApplied Physics Letters, 1981
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979