Thin film formation of In2O3, TiN, and TaN by rf reactive ion plating

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Abstract
In2O3, TiN, and TaN films were prepared on glass substrates by a rf ion-plating technique. Indium, titanium, and tantalum were evaporated from evaporation sources in an oxygen or nitrogen atmosphere at a pressure on the order of 10−4 Torr. These films were observed to be pinhole free and uniform, showing excellent electrical and physical properties. The rf ion-plating system appears to have some advantages over other methods of reactive deposition.

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