120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs
- 30 November 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 39 (12) , 2397-2402
- https://doi.org/10.1109/JSSC.2004.835647
Abstract
InP HBT ICs capable of 120-Gb/s multiplexing and 110-Gb/s demultiplexing operation have been developed. They feature a direct-drive series-gating configuration selector, an asymmetrical latch flip-flop, and broadband impedance matching with inverted microstrip lines. Their input sensitivity is less than 100 mV/sub pp/, and the output swing is more than 400 mV/sub pp/. To the best of our knowledge, this result is the highest data rate operation reported for electronic ICs. Moreover, an error-free multiplexing and demultiplexing operation at 100 Gb/s was demonstrated.Keywords
This publication has 7 references indexed in Scilit:
- A 100-Gbit/s 2:1 multiplexer in InP HEMT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High quality 80 Gbit/s InP DHBT selector and its use for NRZ-RZ conversionElectronics Letters, 2003
- An inverted microstrip line IC structure for ultra high-speed applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistorsElectronics Letters, 2002
- A distributed selector IC using GaAs MESFET's with multilayer-interconnection structureIEEE Journal of Solid-State Circuits, 2000
- PRINCIPLES OF MONOLITHIC WIDEBAND FEEDBACK AMPLIFIER DESIGNInternational Journal of High Speed Electronics and Systems, 1992