Modeling of low-pressure chemical vapor deposition
- 1 May 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (5) , 501-504
- https://doi.org/10.1109/T-ED.1981.20373
Abstract
A simple mathematical model is established for low-pressure chemical vapor deposition (LPCVD) reactors which takes into account the interaction between diffusion and convection. The classical method of separation of variables can be applied to solve the partial differential equations describing the process, in view of the fact that in practice the deposition rate is small.Keywords
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