Lateral grating array high power CW visible semiconductor laser

Abstract
A periodic, grating-like array of substrate grooves oriented parallel to the longitudinal axis of the laser provides a small periodic lateral thickness modulation of the active region of an MO-CVD-grown Ga1−xAlxAs laser producing phase-locked operation at 7680 Å. CW output powers as high as 138 mW/facet have been obtained.