Storage experiments with ultra-high density MNOS capacitors

1 January 1976

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 64 (11) , 1629-1630
https://doi.org/10.1109/PROC.1976.10389

Abstract

Experiments have been performed to determine the feasibility of achieving storage densities greater than 10⁷/in²using MNOS capacitors. Good signal-to-noise ratios have been achieved in arrays of air-isolated storage sites 0.09 mil × 0.15 mil using a voltage ramp for depletion sensing and avalanche breakdown to avoid deep depletion during writing.

Keywords

CAPACITORS
CIRCUIT SIMULATION
EQUATIONS
MATERIAL STORAGE
CONTACTS
WRITING
TUNED CIRCUITS
INDUCTORS
RLC CIRCUITS
OSCILLATORS

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