Ordering of oxide precipitates in oxygen implanted silicon
- 27 October 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17) , 1062-1064
- https://doi.org/10.1063/1.97475
Abstract
An order network of oxide precipitates has been found in the monocrystalline superficial silicon layer of a silicon-on-insulator structure obtained by high-dose oxygen implantation. The network consists of oxide precipitates 2 nm in size spaced about 5 nm apart. Electron diffraction patterns indicate that ordering occurs both parallel and perpendicular to the surface along the 〈100〉 directions of the silicon lattice. The precipitate network has a cubic symmetry.Keywords
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