Czochralski Growth of Square Silicon Single Crystals
- 1 July 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (7) , L361
- https://doi.org/10.1143/jjap.19.l361
Abstract
Square single crystal silicon ingots with 3-inch sides are grown by forming an essentially uniform temperature distribution around the growing ingots. The resistivity distribution pattern for wafers from these ingots is generally square. The square single crystals have etch pit densities of 1-2×103/cm2. The growth for square crystals is explained by a model in which supercooling occurs in the radial direction of the ingots.Keywords
This publication has 5 references indexed in Scilit:
- Evaluation of Temperature Distribution of Melt in Silicon Ribbon GrowthJapanese Journal of Applied Physics, 1979
- Thermal balancing via distributed inert-gas streams for high-meniscus ribbon crystal growthJournal of Crystal Growth, 1977
- A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society, 1977
- Electrical effects of SiC inclusions in EFG silicon ribbon solar cellsJournal of Applied Physics, 1976
- The temperature distribution in pulled germanium crystals during growthSolid-State Electronics, 1964