The Microwave Magneto-Kerr Effect in Silicon and Germanium. I. Measurement of Complex Hall Factor

The complex conductivity and Hall factor of lightly doped n‐ and p‐type Si and Ge are measured at 8.6 GHz over the temperature range ${77}^{\circ }{\text{[double-line equal to or less-than] T [double-line equal to or less-than] 300}}^{\circ }\mathrm{K}$ . These phenomenological parameters are determined from observations of microwave reflectivity and low‐field magneto‐Kerr effect. The experimental analysis applies rigorously to guided waves and treats multiple reflections within the sample exactly. Both Hall and conductivity currents are found to lag the electric field at low temperature. These effects are attributed to the increased influence of the inertia of the charge carriers at low temperature.