Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers

1 September 1994

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 758-763
https://doi.org/10.1109/euma.1994.337302

Abstract

Single-barrier varactors reported earlier were limited in their power output. By using a pseudomorphic In0.52Al0.48As/AlAs/In0.52Al0.48As barrier with good current blocking characteristics and stacking three varactor layers by MBE technique, we report the first symmetric stacked varactor on InP with low leakage, high breakdown voltage (≈ 14V) and 50 mW power output capability at 39 GHz, 20 mW at 186 GHz.

Keywords

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