A Bloch Line Pair Generator Using the Flank Wall near the Stripe Domain Head for the Bloch Line Memory
- 1 March 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (3A) , L228
- https://doi.org/10.1143/jjap.25.l228
Abstract
A technique for injecting a vertical Bloch line (VBL) pair into a stripe domain head has been developed. This method utilizes horizontal Bloch line punch-through at the flank wall and successive domain chopping. The method is more practical than that of pushing the stripe domain head. In the new method, the domain is only controlled to lie beneath the conductor pattern for a VBL pair injection. Experimentally, a result of VBL pair injection is shown using 5 µm bubble garnet film and a reasonable margin is obtained in the pulsed bias field vs its width.Keywords
This publication has 4 references indexed in Scilit:
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- A new-ultra-density solid state memory: Bloch line memoryIEEE Transactions on Magnetics, 1983
- Experimental confirmation of fundamental functions for a novel Bloch line memoryIEEE Transactions on Magnetics, 1983
- Formation and Punch-Through of Horizontal Bloch Line in A Stripe Domain WallJapanese Journal of Applied Physics, 1979