Optical properties of gallium phosphide grown by floating zone I. Refractive index and reflection coefficient
- 31 October 1969
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 4 (10) , 781-787
- https://doi.org/10.1016/0025-5408(69)90069-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Dielectric Dispersion and Phonon Line Shape in Gallium PhosphidePhysical Review B, 1968
- Interaction of Plasmons and Optical Phonons in Degenerate SemiconductorsPhysical Review B, 1966
- Formation of Built-in Light-emitting Junctions in Solution-grown GaP Containing Shallow Donors and AcceptorsIBM Journal of Research and Development, 1966
- Reflectivity ofAlloysPhysical Review Letters, 1965
- Reflectivity and Band Structure of GaAs, GaP, and Ga(as, P) AlloysPhysical Review Letters, 1965
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964
- Pair Spectra and "Edge" Emission in Gallium PhosphidePhysical Review B, 1964
- The Preparation and Floating Zone Processing of Gallium PhosphideJournal of the Electrochemical Society, 1961
- Infrared Lattice Absorption of GaPPhysical Review B, 1960