Improved Transconductance of AlGaAs/GaAs Heterostructure FET with Si-Doped Channel

1 September 1986

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 25 (9A) , L731
https://doi.org/10.1143/jjap.25.l731

Abstract

The n⁺ self-alignment process with a furnace annealing was applied to the fabrication of heterostructure FETs. Maximum transconductance of 350 mS/mm and the K-value of 430 mA/V² mm were obtained for the HMT structure (L g=0.7 µm) at room temperature. An intentionally doped channel structure was also studied. An extremely high transconductance of 440 mS/mm and an extremely high K-value of 520 mA/V² mm were obtained for this structure, suggesting that the performances of HEMTs mainly depend on the capacitance between the gate electrode and the confinedelectron gas.

Keywords

This publication has 2 references indexed in Scilit:

High-Speed Low-Power Ring Oscillator Using Inverted-Structure Modulation-Doped GaAs/n-AlGaAs Field-Effect Transistors
Japanese Journal of Applied Physics, 1985
Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors
IEEE Electron Device Letters, 1984