Low Resistance Ohmic Contacts onto n ‐ InP by Palladium Electroless Bath Deposition

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Abstract
A new electroless palladium deposition bath is presented in this work. This acidic bath is highly stable and the deposition speed reaches around 0.8 μm/h. Chemical depth profiling by Auger spectroscopy, low incidence x‐ray diffraction and SEM are used to study the morphology and the structure of the palladium film and to verify the deposition mechanism hypothesis. Just after deposition, palladium metal is present with a crystallized compound like and this phase evolves with the annealing temperature to , , . Some methods are employed for electrical analysis and the best value of the specific contact resistance is in the annealing temperature range 300°–350°C. The value of this specific contact resistance is held even after 20h of an annealing temperature of 400°C.

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