Nanoscale silicon field effect transistors fabricated using imprint lithography
- 29 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (13) , 1881-1883
- https://doi.org/10.1063/1.119426
Abstract
We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 2×2 cm lithography field with good uniformity. Compared with devices fabricated by the conventional electron-beam lithography, we did not observe any degradation in the device characteristics. The successful fabrication of the semiconductor nanodevices represents a step forward to make nanoimprint lithography a viable technique for the mass production of semiconductor devices.Keywords
This publication has 3 references indexed in Scilit:
- Nanoimprint lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Imprint of sub-25 nm vias and trenches in polymersApplied Physics Letters, 1995
- Single electron and hole quantum dot transistors operating above 110 KJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995