Defects in semiconductors - 1982
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 1-3
- https://doi.org/10.1016/0378-4363(83)90218-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Recombination-enhanced migration of interstitial aluminum in siliconPhysical Review B, 1979
- Theory of recombination-enhanced defect reactions in semiconductorsPhysical Review B, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Diffusion Mechanisms and Point Defects in Silicon and GermaniumPhysica Status Solidi (b), 1968