MOVPE-grown InAlAs/InGaAs/Inp MODFETs with very high f T
- 4 February 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (3) , 274-275
- https://doi.org/10.1049/el:19930187
Abstract
High-performance 015μm gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent ‘kink-free’ DC characteristics with extrinsic transconductance gm of 1080mS/mm at a drain current of 508mA/mm have been achieved. A unity current-gain cutoff frequency fT of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown latticematched InAlAs/InGaAs MODFETs.Keywords
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