Abstract
A 38 GHz monolithic DRO (dielectric resonator oscillator) incorporating a 0.3 micron HEMT (high electron mobility transistor) has been designed using a small-signal design procedure. Ten DROs have been tested, seven of which were found to be fully working at RF and gave output powers up to 0 dBm. The temperature coefficient of the frequency of oscillation was -2.1 ppm/ degrees C and the phase noise was -68 dBc/Hz at 100 kHz from carrier. The DRO is potentially inexpensive when produced in high volume and is suitable for a local oscillator in a broadband telecommunications system.

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