Multiatomic step formation mechanism of metalorganic vapor phase epitaxial grown GaAs vicinal surfaces and its application to quantum well wires
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 183-187
- https://doi.org/10.1016/0022-0248(94)00579-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Atomic-Scale Fluctuation of the Terrace Width on Vicinal (001) GaAs SurfacesJapanese Journal of Applied Physics, 1991
- (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor depositionJournal of Vacuum Science & Technology B, 1988