Numerical Analysis of Breakdown in Silicon Diodes
- 1 January 1989
- book chapter
- Published by Springer Nature
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Nonlinear energy relaxation oscillations and chaotic dynamics of hot carriersSolid-State Electronics, 1988
- Effect of impact ionisation on hot-carrier energy and momentum relaxation in semiconductorsJournal of Physics C: Solid State Physics, 1987
- NUMERICAL SOLUTION OF THE HYDRODYNAMIC MODEL FOR A ONE‐DIMENSIONAL SEMICONDUCTOR DEVICECOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1987
- The recombination-induced temperature change of non-equilibrium charge carriersJournal of Physics C: Solid State Physics, 1986
- MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICESCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1986
- An investigation of steady-state velocity overshoot in siliconSolid-State Electronics, 1985
- Electron and hole ionization rates in epitaxial silicon at high electric fieldsSolid-State Electronics, 1973
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961