Epitaxy of atomically flat CaF2 films on Si(111) substrates

Publisher Website

1 May 2002

journal article
Published by Elsevier in Thin Solid Films

Vol. 410 (1-2) , 72-75
https://doi.org/10.1016/s0040-6090(02)00245-6

Abstract

No abstract available

Keywords

This publication has 21 references indexed in Scilit:

Growth kinetics of ${CaF}_{2} / Si (111)$ for a two-step deposition
Physical Review B, 2000
CaF₂/CdF₂ Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
Japanese Journal of Applied Physics, 2000
Creation and consumption of free Si atoms at the growth front of a CaF monolayer on $Si (111) 7 \times 7$
Physical Review B, 1998
Epitaxial growth mechanisms and structure of ${CaF}_{2}$ /Si(111)
Physical Review B, 1994
Low Temperature (∼420°C) Epitaxial Growth of CaF₂/Si(111) by Ionized-Cluster-Beam Technique
Japanese Journal of Applied Physics, 1990
${CaF}_{2}$ /Si heteroepitaxy: Importance of stoichiometry, interface bonding, and lattice mismatch
Physical Review B, 1990
Scanning tunneling microscopy of insulators: CaF2 epitaxy on Si (111)
Applied Physics Letters, 1989
Growth and characterization of single crystal insulators on silicon
Critical Reviews in Solid State and Materials Sciences, 1989
Photoemission study of bonding at the ${CaF}_{2}$ -on-Si(111) interface
Physical Review B, 1987
Electronic structure of the ${CaF}_{2}$ /Si(111) interface
Physical Review B, 1986