n-p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENT
- 1 May 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (9) , 335-337
- https://doi.org/10.1063/1.1653216
Abstract
We have fabricated n‐p junction photovoltaic detectors in InSb using proton bombardment to create the n‐type layer. At 77 °K, diodes which were 20 mils in diameter had zero‐bias resistances of several hundred thousand ohms. The peak detectivity at 4.9 μ of these diodes with a 2π, 300 °K background was typically greater than 3×1010 cm Hz1/2/W with the largest value observed being 1011 cm Hz1/2/W. Diode quantum efficiencies near 35% were observed.Keywords
This publication has 2 references indexed in Scilit:
- Effects of Light on the Charge State of InSb–MOS DevicesJournal of Applied Physics, 1969
- Neutron Irradiation of Indium AntimonidePhysical Review B, 1954