66 GHz static frequency divider in transferred-substrate HBT technology

20 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/rfic.1999.805245

Abstract

We report a 66 GHz emitter coupled logic (ECL) 2:1 static frequency divider using InAlAs/InGaAs transferred-substrate HBTs. To our knowledge this is the fastest static divider reported in any semiconductor technology.

Keywords

FREQUENCY CONVERSION
HETEROJUNCTION BIPOLAR TRANSISTORS
MASTER-SLAVE
RESISTORS
MICROSTRIP
INTEGRATED CIRCUIT INTERCONNECTIONS
CIRCUIT SYNTHESIS
ANALOG-DIGITAL CONVERSION
FLIP-FLOPS
CLOCKS

This publication has 2 references indexed in Scilit:

A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technology
IEEE Electron Device Letters, 1998