Multi emitter finger SiGe-HBTs with f/sub max/ up to 120 GHz
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 377-380
- https://doi.org/10.1109/iedm.1994.383388
Abstract
Multi emitter finger silicon germanium heterojunction bipolar transistors (SiGe-HBTs) grown by MBE have been investigated by varying the collector design. No current crush effects have been observed for different transistor geometries. SiGe-HBTs with a 400 nm 2/spl times/10/sup 16/ cm/sup -3/ doped collector layers and 10 emitter fingers of 1 /spl mu/m/spl times/10 /spl mu/m exhibit a maximum oscillation frequency of 120 GHz and a power gain of 20 dB at 10 GHz. These are presently the highest values reported for silicon based transistors.Keywords
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