Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films
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- 3 September 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (10) , 1441-1443
- https://doi.org/10.1063/1.1400761
Abstract
Ultrananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were synthesized by a microwave plasma-enhanced chemical-vapor-deposition method using a CH4(1%)/Ar gas mixture and 1%–20% nitrogen gas added. The electrical conductivity of the nitrogen-doped UNCD films increases by five orders of magnitude (up to 143 Ω−1 cm−1) with increasing nitrogen content. Conductivity and Hall measurements made as a function of film temperature down to 4.2 K indicate that these films have the highest n-type conductivity and carrier concentration demonstrated for phase-pure diamond thin films. Grain-boundary conduction is proposed to explain the remarkable transport properties of these films.Keywords
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