A cost-effective high-power S-band 6-bit phase shifter with integrated LVCMOS control logic

1 October 2007

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 463-466
https://doi.org/10.1109/emicc.2007.4412749

Abstract

In this paper the design and performance of a high-power S-band 6-bit phase shifter is discussed. It is shown that excellent results have been obtained in the low cost high volume PP50-11 0.5 um PHEMT process of WIN Semiconductors. The obtained results demonstrate that realization of a single chip transmit chip consisting of a phase shifter and a high-power amplifier is feasible.

Keywords

PHASE SHIFTERS
LOGIC
SWITCHES
POWER AMPLIFIERS
POWER GENERATION
RECEIVING ANTENNAS
COSTS
PHASED ARRAYS
TRANSMITTING ANTENNAS
PHEMTS

This publication has 2 references indexed in Scilit:

Generic robust LVCMOS-compatible control logic for GaAs HEMT switches
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2006
Monolithic FET structures for high-power control component applications
IEEE Transactions on Microwave Theory and Techniques, 1989