A technology for high-performance single-crystal silicon-on-insulator transistors

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Abstract
A process for forming transistors and circuits in a thin single-crystal silicon film on a glass substrate is presented. The process involves the electrostatic bonding of a silicon wafer to glass and the subsequent thinning of the wafer using doping-sensitive etchants to retain only the epitaxial layer. NMOS transistors have shown channel mobilities of 640 cm2/V-s, while leakage currents have been measured at less than 10-14A/µm.