On the microscopic structures of shallow donors in 6H SiC: studies with EPR and ENDOR
- 28 February 1995
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 93 (5) , 393-397
- https://doi.org/10.1016/0038-1098(94)00805-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Magnetic circular dichroism of a vanadium impurity in 6H-silicon carbideSemiconductor Science and Technology, 1993
- Structural Analysis of Point Defects in SolidsPublished by Springer Nature ,1992
- Kohn-Luttinger Interference Effect and Location of the Conduction-Band Minima inPhysical Review B, 1972
- Kohn-Luttinger Interference Effect for Donors inSiCPhysical Review B, 1965
- Electron Spin Resonance Studies in SiCPhysical Review B, 1961
- Hyperfine Splitting of Donor States in SiliconPhysical Review B, 1955