Zone Edge Phonons in Gallium Phosphide
- 1 November 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 120 (1) , 207-213
- https://doi.org/10.1002/pssb.2221200123
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Excited states of donor bound excitons in GaPPhysical Review B, 1980
- The lattice dynamics of gallium phosphideJournal of Physics C: Solid State Physics, 1979
- Two-phonon infrared absorption in In1−xGaxP mixed crystalsPhysica Status Solidi (b), 1978
- Higher‐order Raman spectra of GaPJournal of Raman Spectroscopy, 1978
- Two-phonon absorption in InP and GaPSolid State Communications, 1976
- Second-Order Raman Spectra and Phonon Dispersion in GaPCanadian Journal of Physics, 1973
- Optical Properties of the Donor Tin in Gallium PhosphidePhysical Review B, 1970
- Lattice dynamics of III–V compoundsCanadian Journal of Physics, 1969
- Absorption and Luminescence of Excitons at Neutral Donors in Gallium PhosphidePhysical Review B, 1967
- Theory of Infrared and Raman Processes in Crystals: Selection Rules in Diamond and ZincblendePhysical Review B, 1963