A new high purity doping source for CVD Si: Ga epitaxy
- 1 March 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 87 (4) , 425-430
- https://doi.org/10.1016/0022-0248(88)90089-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- X-acceptors in siliconSolid State Communications, 1982
- Diffusion of gallium in siliconJournal of Applied Physics, 1980
- The Incorporation of Phosphorus in Silicon Epitaxial Layer GrowthJournal of the Electrochemical Society, 1974
- Gallium doped epitaxial siliconJournal of Crystal Growth, 1971